Emmanuel Kriezis received his Diploma in Electrical Engineering and his Ph.D. from the Department of Electrical and Computer Engineering of the Aristotle University of Thessaloniki in 1991 and 1996, respectively. In 1998 he joined the Department of Engineering Science of Oxford University, initially as a postdoctoral researcher at EPSRC and later as Royal Society University Research Fellow. In 2002 he was elected Assistant Professor at the Department of Electrical and Computer Engineering of AUTh and from May 2014 he serves as Professor. His research interests include areas of nanophotographic technology with emphasis on plasmon, integrated photonic components in silicon, non-linear phenomena in optical frequencies, graphene devices, microstructure optical fibers and liquid crystal photon devices.
The subject of his speech...
Silicon-photonic electro-optic modulators based on graphene and epsilon-near-zero materials
Gray and near-zero-dielectric constant (ENZ) materials have high expectations for the implementation of dynamically controlled photonic components in the near infrared (NIR) spectral region. Graphene exhibits variable surface optical conductivity by applying polarization voltage, while Transparent Conducting Oxides (TCO) allow ENZ behavior to occur in the NIR by varying the concentration of free carriers. The above ideas are evaluated in the case of silicon photonic modulators incorporating graphene or ENZ layers. Waveguide or coordinator modifiers are examined, with emphasis on small footprint, energy efficiency and broadband behavior.